Dr.
Serguey A. Fedoseev
LIST OF SCIENTIFIC
PUBLICATIONS
Referenced (bold) and
nonreferenced (plain)
- Fedoseev S.A.,
Chechuy S.N., Pyskin S.L., Shcudlov V.I.
Laser vacuum deposition and investigation of thin
films and thin-film devices structures. Symp.
"OPTIKA -80", Lectures, Budapest, 1980. (in
English)
- Fedoseev S.A., Chechuy S.N., Pyskin S.L., and al.
Some results of power laser irradiation interraction with materials. Int.
Symp., WMEI, Gabrovo, Bulgaria, 1982. (in Russian).
- Fedoseev S.A., Chechuy S.N., Pyskin S.L., Shcudlov V.I.
Laser vacuum epitaxy and investigation of thin films and
thin-film devices. In the book: “Kinetic of
non-equilibrum electron systems”, Kishinev, 1982. (in Russian).
- Fedoseev S.A., Chechuy S.N., Pyskin S.L., Shcudlov V.I.
Stability and mechanical durability of GaP/Si heterostructures. USSR
Symp., Abstracts, Kishinev, 1982. (in Russian).
- Chechuy S.N., Fedoseev
S.A., Pyskin S.L., Zenchenko V.P., and al.
Laser vacuum epitaxy of A(III)B(V) thin films on silicon.
USSR II Symp. of Crystal Growth, Abstract,
Novosubirsk,1982. (in Russian)
- hechuy S.N., Fedoseev S.A., Pyskin S.L.
Investigation of some integrated optics elements creted
by laser vacuum deposition and epitaxy. Preprint No 2, Inst. Of Appl.
Phys., Kishinev, 1982 .(in Russian).
- Fedoseev S.A.
Spectral and zond diagnostic of laser produced plasma
used for epitaxy. Symp.of Junior Scientists, Abstract, Kishinev, 1982. (in
Russian).
- Damaskin I.A., Fedoseev S.A., Pyskin S.L.
Spectral sensibility of GaP/Si heterojunctions grown by
laser vacuum epitaxy. II Rep.Symp., Abstract, Odessa, 1982.(in Russian).
- Fedoseev S.A.
Laser produced plasma diagnostic and laser technology optimisation. In the
book: “Kinetic processes in
intrinsic semiconductors”. Kishinev, 1984. (in Russian).
- Damaskin I.A., Chechuy S.N., Fedoseev
S.A., and al.
Optical and electrooptical properties of GaP/Si heterostructures. In the
book: “Kinetic processes in
intrinsic semiconductors”, Kishinev, 1984. (in Russian).
- Fedoseev S.A.
Switching MIS structures prepared by laser vacuum deposition. Symp. Junior
Scientists, Abstract, Kishinev,
1984. (in Russian).
- Budyanu W.A., Chechuy S.N., Damaskin I.A., Fedoseev
S.A., and al.
Properties of heterostructures GaAs/Si grown by laser
vacuum epitaxy. Sov. J. Physika i Technika
poluprovodnikov., V.18, No 4, 1984. (in Russian).
- Budyanu W.A., Chechuy S.N., Damaskin I.A., Fedoseev S.A., and al.
Applied spectroscopie of laser produced plasma from
semiconductor targets USSR Symp., Abstract, Leningrad,
1984. (in Russian)
- Budyanu W.A., Chechuy S.N., Damaskin I.A., Fedoseev
S.A., and al. Investigation of A(III)B(V) -Si
heterojunctions grown by laser assisted deposition. Phys.St.Sol. (A), V.91, No 1, 1985.
(in
English)
- Fedoseev S.A.
Manufacturing of some thin films and thin-film device
structures by laser vacuum epitaxy and their properties investigation. Manuscript of
Ph.D. degree Dissert., Inst.
of Appl. Phys., Kishinev, 1985. (in Russian).
- Budyanu W.A., Chechuy S.N., Damaskin I.A., Fedoseev
S.A., and al.
Spectroscopic investigation of semiconductor targets
evaporation by laser irradiation. Rev.Pum. Phys., V.31,
No 9-10, 1986. (in English)
- Fedoseev S.A., Budyanu W.A., Chechuy S.N., Damaskin I.A., and al. Laser vacuum
epitaxy of A(III)B(V) semiconductors on silicon. Rev.Rum.Phys., V.32, No 1-2, 1986. (in English)
- Budyanu W.A., Chechuy S.N., Damaskin I.A.,
Fedoseev S.A., and al. Transmission electron
microscopie of A(III)B(V) thin films grown by laser
vacuum epitaxy. IV Rep.Symp., Abstract, Kishinev, 1986. (in Russian).
- Fedoseev S.A., Budyanu W.A., Chechuy S.N., Damaskin I.A., and
al. Growth of
thin-film structures from errosion laser plasma. In the book: “Optical and kinetic effects in non-equilibrium
electron systems”, Kishinev, 1986. (in Russian).
- Fedoseev S.A. Switching effects in
the structures metal-tunnel insulator-semiconductor. In
the book: “Optical and kinetic effects in
non-equilibrium electron systems”, Kishinev, 1986. (in Russian).
- Bondarenko W.N., Fedoseev
S.A., and al.
Properties of A(III)B(V) – Si structures having great
mismatching of lattices. XI USSR Symp., Abstract, 1988. (in Russian).
- Fedoseev S.A., Pyskin
S.L.,Valkovskaya M.I., Zenchenko V.P. Transmission
electron microscopie of A(III)B(V) – Si structures with
high lattices mismatching. 7 USSR Symp. of Crystal Growth, Abstract,
Moscow, 1988. (in Russian).
- Fedoseev S.A.,
Nasakin A.A., Zenchenko Wit.P., Zenchenko Wal. P.
Investigation of A(III)D(V) thin THIN epitaxial films and A(III)B(V)-Si
Heterostructures. In the book: “Laser
methods of semiconductor structure growth and investigation”. Kishinev, 1988.
(in Russian).
- Bondarenko W.N., Fedoseev S.A.,
Zenchenko Wit.P., Zenchenko Wal. P.
Electrical and spectral properties of p-n junctions made
by laser plasma of V-group material treatment. In the book: “Laser methods of semiconductor structures growth
and investigation”, Kishinev, 1988. (in Russian).
- Fedoseev S.A.,
Budyanu W.A., and al.
Epitaxial growth processes by vapor-plasma flux
cteated by laser irradiation. Symp. "OPTIKA
-88", Lectures, Budapest, 1988. (in
English)
- Budyanu W.A., Fedoseev S.A.,
Nasakin A.A., and al.
Method of semiconductor structure creation for integrated
circuit technology. Invention NR 4429188, 24.5.88. (in Russian).
- Fedoseev S.A.,
Nasakin A.A., Nasakin A.A., Pyskin S.L. Method of
semiconductor structure creation. Invention NR 1464787,
8.11.88 (in Russian).
- Budyanu W.A., Damaskin I.A., Fedoseev
S.A., and al.
Spectral diagnostic of laser produced plasma from YBaCuO ceramics. USSR
Symp. on HT superconductivity, Abstract, Chernogolovka, 1989. (in Russian).
- Fedoseev S.A.,
Budyanu W.A., Damaskin I.A., and al. Spectroscopic
investigation of laser plasma produced from Y-BA-Cu-Oxide
superconductor target. Symp. on HT superconductivity, Lectures, USTRON,
POLAND, 1989. (in English)
- Fedoseev S.A., Kotya B., Mustiatche A.N., Pasechnik K.
Argon–ion laser for cosmetic surgery. Int.Symp.,
"Laser and Medicine”, Lectures, Tashkent, 1989. (in Russian).
- Bereza W.W., Fedoseev
S.A., Natarov N.N.
Surface modification of steel by laser irradiation. Symp. BAKOP,
Absatract, Moscow, 1992. (in Russian).
- Fedoseev S.A., Giannini G., Lagomarsino S., Pyskin S.L.
Preparation and structural properties of some III-V
semiconductor films grown on (001)- oriented silicon substrates. Applied Surface
Science, No.56-58, 1992.
(in English)
Download
SurfArt.doc
- Fedoseev Serguey
and Pongpat Assitirat, “Photonic Lightning
Direction-Finding System”, EECON-20, Proceedings, Bangkok, 1997, pp.98-102. (in English)
- Fedosseeve Serguey and Samruay Sangkasaad, “Advanced lightning detecting and
direction-finding system”. EECON-21, Proceedings, Bangkok, Thailand, 1998, pp.69-72.(in English)
- Fedoseev Serguey and
Samrauy Sangkasaad, “Computer based Lightning
Detection and Photonic Location”. Budapest Power
Tech’99 Conference (August 29 – September 3, 1999),
Abstract Records, p.145. (in English)
Download manuscript.pdf
- Fedosseev Serguey and Vitthawat
Ngampradit . Wireless Measurements into High Voltage Environment, Submited to EECON-22,
Proceedings, Bangkok, Thailand, December 1999, pp.224-227. (in English)
Download EECON22.doc
- Fedoseev
Serguey and Samrauy Sangkasaad,
“National Lightning Location Network – an Altarnative Approach”, “2000 IEEE EMC
Symposium”, Washington,
August-September 2000, Proceedings,V2, pp. 965-968.
Download EMC2000.doc