To work in R&D section of a Electronics Major or a University where I can work with the latest tools and methodologies and develop new IP and products with immediate and near-future market.
Education:
Presently pursuing Bachelor of Technology (Senior Undergraduate) in Electronics Engineering from Indian School of Mines, Dhanbad
Did my schooling from Boys' High School & College, Allahabad
Projects:
=>Full Adder Circuit Design through BDD and implementation through Single Electron Systems (SET)
Mentor: Prof. B. B. Bhattacharya, ISI Kolkata
=>Nano Scale Device Modelling
Mentor: Dr. S. Dasgupta, IIT Roorkee
=>Design of True Value Simulator for transition faults in VLSI Circuits
Mentor: Prof. S. Sur-Kolay, ISI Kolkata
Papers:
Conference:
=>"Design of a Novel Device Architecture : Parallely Connected Hetero Material DG MOSFET (PCHEM DG MOSFET)"
S Ganguly, D Datta, A A P Sarab, S Dasgupta
NDSI 2005, Austin, Texas
=>"Extraction of Gate Tunneling Current in Gaussian Doped UTB DG MOSFET"
A A P Sarab, S Ganguly, D Datta, S Dasgupta
9th IEEE VLSI Design and Test Symposium, Bangalore, India
=>"Simulation of Quantum Effects in Nanoscale DG MOSFETs with 2D Electrostatics"
D Datta, S Ganguly, A A P Sarab, S Dasgupta
13th International Workshop on Physics of Semiconductor Devices 2005 , New Delhi, India
Won the Best Paper Award
=>"Multi Bit Adder Design and its Fault Simulation"
D Datta, S Ganguly
IEEE VLSI Design Conference 2006, Hyderabad, India
=>"Quantum Transport in Ballistic Conductors: Conductance Quantizationi n Nano Crystals"
S Ganguly, D Datta
Accepted in IEEE Conference on Emerging Technologies 2006, Singapore
=>"Quantum Ballistic Transport in Gaussian doped DG MOSFETs"
D Datta, S Ganguly, A A P Sarab, S Dasgupta
Interantional Conference on Electronic and Photonic Materials Devices and Systems 2006, Kolkata, India
Journal:
=>"Novel nanoscale Device Architecture to reduce leakage currents in logic circuits: a quantum mechanical study"
D Datta, S Ganguly, S Dasgupta, A A P Sarab
Semiconductor Science and Technology 21(2006)397-408
Institute of Physics Publishing